SPP02N60C3XKSA1 datasheet

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• Маркировка
  SPP02N60C3XKSA1
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies SPP02N60C3XKSA1 Configuration: Single Continuous Drain Current: 1.8 A Drain-source Breakdown Voltage: 650 V Fall Time: 12 ns Gate Charge Qg: 9.5 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220 Part # Aliases: SP000681014 SPP02N60C3HKSA1 Power Dissipation: 25 W Resistance Drain-source Rds (on): 3 Ohms Rise Time: 3 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 68 ns RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 3 Ohms Typical Turn-Off Delay Time: 68 ns
• Количество страниц
  12 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  368,69 KB

SPP02N60C3XKSA1 datasheet скачать

SPP02N60C3XKSA1 datasheet